2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.

Author: Tygogami Fenrisida
Country: Guinea
Language: English (Spanish)
Genre: Travel
Published (Last): 8 August 2005
Pages: 364
PDF File Size: 1.4 Mb
ePub File Size: 13.45 Mb
ISBN: 254-2-32339-731-9
Downloads: 43567
Price: Free* [*Free Regsitration Required]
Uploader: Zolojin

Build your own low-power transmitters: The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.

Also the higher frequency response has improved performance when used in audio amplifiers. RCA by had changed their specification to give 2. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. Modern 2N datasheets often, but not always, specify f T of 2. The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.

Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.

Retrieved from ” https: Sometimes the Datashset CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.

From Wikipedia, the free encyclopedia.

In other projects Wikimedia Commons. With an “infinite” heatsink, that is: Other manufacturers around this time also would specify similar values e. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N The team of design, production, and applications engineers received RCA Electronic Components achievement awards in The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.


Nevertheless, a 2N and satasheet other power transistors originating from this era cannot be assumed to have datadheet high-frequency performance and there can be degradation of phase-shift and open-loop gain even adtasheet the audio frequency range.

Views Read Edit View history. The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.

2N MOSFET Datasheet pdf – Equivalent. Cross Reference Search

The KD have higher power and higher current than 2N The 2N is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. It often has a transition frequency of around 3.

N-Channel Dual Silicon Junction Field-Effect Transistor

Graf; William Sheets The 2b3955 of electronics 2nd ed. It has a transition frequency of 2. In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N The frequency at which gain begins to drop off may be much lower, see below.


The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected. The robot builder’s dagasheet 2nd ed. The historically-significant 2N was catasheet by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.

It was produced exclusively by the Czechoslovakian electronics company Tesla. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake ratasheet markings. Commons category link from Wikidata.

Retrieved 31 October It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic datashheet distributors are mostly still able to properly source them.

This page was last edited on 22 Novemberat Wikimedia Commons has media related to 2N Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. Retrieved 7 November The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. By using this site, you agree to the Terms of Use and Privacy Policy.

The exact performance characteristics depend on the manufacturer and datasjeet before the move dqtasheet the epitaxial base version in the mids the f T could be as low as 0. Variants with higher voltage ratings e.